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| (R) STTH6003TV/CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance: < 45 pF LOW INDUCTANCE AND LOW CAPACITANCE ALLOW SIMPLIFIED LAYOUT DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged either in ISOTOP or in TO-247, this device is intended for use in low voltage, high ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current RMS forward current Average forward current ISOTOP TO-247 IFSM IRSM Tstg Tj Surge non repetitive forward current. ISOTOP TO-247 Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature Value 300 100 60 30 60 30 60 400 300 4 - 55 to + 150 - 65 to + 175 150 175 Unit V A A A A A A A C C C C K2 A2 2 x 30 A 300 V 1V 55 ns A1 A2 K1 K2 A1 K A2 K1 A1 A2 K A1 ISOTOPTM STTH6003TV TO-247 STTH6003CW frequency inverters, free wheeling operation, welding equipments and telecom power supplies. ISOTOP TO-247 Tc = 95C Per diode = 0.5 Per device Tc =135C Per diode = 0.5 Per device tp = 10 ms sinusoidal tp = 10 ms sinusoidal tp =100 s square ISOTOP TO-247 ISOTOP TO-247 ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed: 5C 1/6 STTH6003TV/CW THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case ISOTOP TO-247 Rth (c) When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 300 V Tj = 25C Tj = 125C IF = 30 A Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.008 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM IF = 30 A VFR = 1.1 x VF max. Vcc = 200 V dIF/dt = 200 A/s IF = 30 A Tj = 125C 0.3 11 Tests conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1A VR = 30 V Tj = 25C Tj = 25C Min. Typ. Max. 40 55 350 5 ns V A Unit ns 0.85 60 Min. Typ. Max. 60 600 1.25 1 V Unit A Per diode Total Per diode Total Coupling Value 1.4 0.75 1 0.55 0.1 Unit C/W VF ** dIF/dt = 200 A/s 2/6 STTH6003TV/CW Fig. 1: Conduction losses versus average current (per diode). P1(W) 40 35 30 25 20 15 10 5 0 0 5 10 IF(av) (A) 15 20 25 =tp/T T Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) = 0.1 = 0.2 = 0.05 = 0.5 Tj=125C Typical values 100 =1 Tj=125C Maximum values 10 Tj=25C Maximum values tp 30 35 40 VFM(V) 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 3a: Relative variation of thermal impedance junction to case versus pulse duration (ISOTOP). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse = 0.5 Fig. 3b: Relative variation of thermal impedance junction to case versus pulse duration (TO-247). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.5 = 0.2 = 0.1 = 0.2 = 0.1 T 0.2 Single pulse tp(s) 1E-2 1E-1 =tp/T tp tp(s) 1E-3 1E-2 0.0 1E-3 1E+0 1E+1 0.0 1E-4 =tp/T tp 1E-1 1E+0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 22 20 18 16 14 12 10 8 6 4 2 0 VR=200V Tj=125C IF=IF(av) IF=2*IF(av) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) 180 160 140 120 100 80 60 40 20 0 VR=200V Tj=125C IF=2*IF(av) IF=0.5*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 3/6 STTH6003TV/CW Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor 0.6 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/s) VR=200V Tj=125C Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125C). 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 S factor IRM Tj(C) 50 75 100 125 0.0 0 50 100 150 200 250 300 350 400 450 500 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode). VFP(V) 10 IF=IF(av) Tj=125C Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) 500 400 300 200 100 IF=IF(av) VFR=1.1*VFmax Tj=125C 8 6 4 2 0 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 4/6 STTH6003TV/CW PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 5/6 STTH6003TV/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Min. Typ. Max. Min. Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139 Weight 27g without screws 4.36g Base qty 10 with screws 30 Ordering code STTH6006TV1 Marking STTH6006TV Package ISOTOP Delivery mode Tube Tube STTH6006CW STTH6006CW TO-247 Cooling method: by conduction (C) Recommended torque value (ISOTOP): 1.3 N.m. Recommended torque value (TO-247: 0.8 N.m. Maximum torque value (ISOTOP): 1.5 N.m. Maximum torque value (TO-247): 1.0 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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